| PART |
Description |
Maker |
| BAV70 Q68000-A6622 |
Silicon Switching Diode Array (For high-speed switchingFor high-speed switching) 0.2 A, 2 ELEMENT, SILICON, SIGNAL DIODE
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| 2SK3748 |
N CHANNEL MOS SILICON TRANSISTOR
High-Voltage High-Speed Switching Applications
High-Voltage, High-Speed Switching Applications
From old datasheet system
|
SANYO[Sanyo Semicon Device]
|
| CTZ3.0 CTZ2.6 CTZ2.7 CTZ2.X CTZ15 |
(CTZ2.6 - CTZ47) HIGH SPEED SILICON SWITCHING DIODE AXIAL LEAD
(CTZxx) HIGH SPEED SILICON SWITCHING DIODE AXIAL LEAD
|
CDIL
|
| 2SA1714 2SA1714K 2SA1714L 2SA1714M |
PNP high-speed switching darlington transistor
PNP SILICON EPITAXIAL POWER TRANSISTOR (DARLINGTON CONNECTION) FOR HIGH-SPEED SWITCHING 进步党硅外延功率晶体管（达林顿连接笔记本高）高速开
|
NEC Corp.
NEC, Corp.
|
| BAV99 Q68000-A549 |
SILICON SWITCHING DIODE ARRAY (FOR HIGH-SPEED SWITCHING CONNECTED IN SERIES)
|
SIEMENS[Siemens Semiconductor Group]
Infineon
|
| HSU226 |
Diodes>Switching
Silicon Schottky Barrier Diode for High Speed Switching
|
RENESAS[Renesas Electronics Corporation]
|
| BAR99 Q62702-A388 |
Silicon Switching Diode (For high-speed switching)
From old datasheet system
|
SIEMENS[Siemens Semiconductor Group]
Infineon
|
| BAW56U |
General Purpose Diodes - Silicon Switching Diode Array for high-speed switching
|
Infineon
|
| H7N1004FM |
Silicon N-Channel MOS FET HigH-Speed Power Switching
Transistors>Switching/MOSFETs
|
Renesas Electronics Corporation
|
| BAS16-02W BAS1602W Q62702-A1239 |
From old datasheet system
Silicon Switching Diode Preliminary data (For high-speed switching applications)
|
Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
